bulletin pd -2.382 rev. d 12/00 ultrafast, soft recovery diode hexfred tm hfa06tb120 -55 to +150 a c 1 w parameter max. units v r cathode-to-anode voltage 1200 v i f @ t c = 100c continuous forward current 8.0 i fsm single pulse forward current 80 i frm maximum repetitive forward current 24 p d @ t c = 25c maximum power dissipation 62.5 p d @ t c = 100c maximum power dissipation 25 t j operating junction and t stg storage temperature range ? ultrafast recovery ? ultrasoft recovery ? very low i rrm ? very low q rr ? specified at operating conditions benefits ? reduced rfi and emi ? reduced power loss in diode and switching transistor ? higher frequency operation ? reduced snubbing ? reduced parts count features description international rectifier's hfa06tb120 is a state of the art ultra fast recovery diode. employing the latest in epitaxial construction and advanced processing techniques it features a superb combination of characteristics which result in performance which is unsurpassed by any rectifier previously available. with basic ratings of 1200 volts and 6 amps continuous current, the hfa06tb120 is especially well suited for use as the companion diode for igbts and mosfets. in addition to ultra fast recovery time, the hexfred product line features extremely low values of peak recovery current (i rrm ) and does not exhibit any tendency to "snap-off" during the t b portion of recovery. the hexfred features combine to offer designers a rectifier with lower noise and significantly lower switching losses in both the diode and the switching transistor. these hexfred advantages can help to significantly reduce snubbing, component count and heatsink sizes. the hexfred hfa06tb120 is ideally suited for applications in power supplies and power conversion systems (such as inverters), motor drives, and many other similar applications where high speed, high efficiency is needed. absolute maximum ratings v r = 1200v v f (typ.)* = 2.4v i f(av) = 6.0a q rr (typ.)= 116nc i rrm (typ.) = 4.4a t rr (typ.) = 26ns di (rec)m /dt (typ.)* = 100a/s * 125c to-220ac 1 base cathode 2 3 cathode anode 2 4
hfa06tb120 bulletin pd-2.382 rev. d 12/00 2 electrical characteristics @ t j = 25c (unless otherwise specified) thermal - mechanical characteristics ! 0.063 in. from case (1.6mm) for 10 sec "# typical socket mount $ mounting surface, flat, smooth and greased dynamic recovery characteristics @ t j = 25c (unless otherwise specified) parameter min. typ. max. units t lead lead temperature ???? ???? 300 c r thjc thermal resistance, junction to case ???? ???? 2.0 r thja thermal resistance, junction to ambient ???? ???? 80 k/w r thcs thermal resistance, case to heat sink ???? 0.5 ???? wt weight ???? 2.0 ???? g ???? 0.07 ???? (oz) mounting torque 6.0 ???? 12 kg-cm 5.0 ???? 10 lbf?in parameter min. typ. max. units test conditions t rr reverse recovery time ??? 26 ??? i f = 1.0a, di f /dt = 200a/s, v r = 30v t rr1 ??? 53 80 ns t j = 25c t rr2 ??? 87 130 t j = 125c i f = 6.0a i rrm1 peak recovery current ??? 4.4 8.0 t j = 25c i rrm2 ??? 5.0 9.0 t j = 125c v r = 200v q rr1 reverse recovery charge ??? 116 320 t j = 25c q rr2 ??? 233 585 t j = 125c di f /dt = 200a/s di (rec)m /dt1 peak rate of recovery ??? 180 ??? t j = 25c di (rec)m /dt2 current during t b ??? 100 ??? t j = 125c " $ ! a a nc a/s parameter min. typ. max. units test conditions v br cathode anode breakdown 1200 ??? ??? v i r = 100a voltage v fm max. forward voltage ??? 2.7 3.0 i f = 6.0a ??? 3.5 3.9 v i f = 12a ??? 2.4 2.8 i f = 6.0a, t j = 125c i rm max. reverse leakage current ??? 0.26 5.0 v r = v r rated ??? 110 500 t j = 125c, v r = 0.8 x v r rated d r c t junction capacitance ??? 9.0 14 pf v r = 200v rated l s series inductance ??? 8.0 ??? nh measured lead to lead 5mm from pkg body
3 bulletin pd-2.382 rev. d 12/00 hfa06tb120 fig. 1 - typical forward voltage drop characteristics forward voltage drop - v fm (v) instantaneous forward current - i f (a) reverse current - i r (a) reverse voltage - v r (v) reverse voltage - v r (v) junction capacitance - c t (pf) thermal impedance z thjc (c/w) fig. 3 - typical junction capacitance vs. reverse voltage 0.1 1 10 100 0246 t = 150?c t = 125?c t = 25?c j j j 0 .01 0.1 1 10 0.00001 0.0001 0.001 0.01 0.1 1 10 100 single pulse (thermal resistance) d = 0.50 d = 0.20 d = 0.10 d = 0.05 d = 0.02 d = 0.01 2 t 1 t p dm notes: 1. duty factor d = t / t 2. peak t = p x z + t j dm thjc c 2 1 fig. 4 - maximum thermal impedance zthjc characteristics 0.01 0.1 1 10 100 1000 0 200 400 600 800 1000 1200 1400 125 ? c 100 ? c 25 ? c t = 150 ? c j 1 10 100 1 10 100 1000 10000 t = 25 ? c j
hfa06tb120 bulletin pd-2.382 rev. d 12/00 4 fig. 5 - typical reverse recovery vs. di f /dt fig. 8 - typical stored charge vs. di f /dt fig. 6 - typical recovery current vs. di f /dt fig. 7 - typical di (rec) m/dt vs. di f /dt qrr - ( nc ) di f /dt - (a/s ) di f /dt - (a/s ) 20 30 40 50 60 70 80 90 100 110 100 1000 i f = 6 a i f = 4 a r j j v = 200v t = 125 ? c t = 25 ? c 0 200 400 600 800 1000 100 1000 i f = 6 a i f = 4 a r j j v = 200v t = 125 ? c t = 25 ? c trr - ( nc ) irr - ( a) di (rec) m/dt - (a/s ) di f /dt - (a/s ) di f /dt - (a/s ) 0 5 1 0 1 5 2 0 2 5 100 1000 i f = 6 a i f = 4 a r j j v = 200v t = 125 ? c t = 25 ? c 10 100 1000 10000 100 1000 i f = 6 a i f = 4 a r j j v = 200v t = 125 ? c t = 25 ? c
5 bulletin pd-2.382 rev. d 12/00 hfa06tb120 t a t b t rr q rr i f i rrm i rrm 0.5 di(rec)m/dt 0.75 i rrm 5 4 3 2 0 1 di /dt f fig. 10 - reverse recovery waveform and definitions fig. 9- reverse recovery parameter test circuit reverse recovery circuit irfp250 d.u.t. l = 70h v = 200v r 0.01 ? g d s dif/dt adjust 4. q rr - area under curve defined by t rr and i rrm t rr x i rrm q rr = 2 5. di (rec)m /dt - peak rate of change of current during t b portion of t rr 1. di f /dt - rate of change of current through zero crossing 2. i rrm - peak reverse recovery current 3. trr - reverse recovery time measured from zero crossing point of negative going i f to point where a line passing through 0.75 i rrm and 0.50 i rrm extrapolated to zero current
hfa06tb120 bulletin pd-2.382 rev. d 12/00 6 ordering information table device code 1 24 3 hf a 06 tb 120 outline table 5 1 - hexfred family 2 - process designator a = a subs. elec. irrad. b = b subs. platinum 3 - average current: code 06 = 6 amps 4 - package outline: code tb = to-220 2 lead 5 - voltage code : code 120 = 1200 v conforms to jedec outline to-220ac dimensions in millimeters and inches
7 bulletin pd-2.382 rev. d 12/00 hfa06tb120 world headquarters: 233 kansas st., el segundo, california 90245 u.s.a. tel: (310) 322 3331. fax: (310) 322 3332. european headquarters: hurst green, oxted, surrey rh8 9bb, u.k. tel: ++ 44 1883 732020. fax: ++ 44 1883 733408. ir canada: 15 lincoln court, brampton, markham, ontario l6t3z2. tel: (905) 453 2200. fax: (905) 475 8801. ir germany: saalburgstrasse 157, 61350 bad homburg. tel: ++ 49 6172 96590. fax: ++ 49 6172 965933. ir italy: via liguria 49, 10071 borgaro, torino. tel: ++ 39 11 4510111. fax: ++ 39 11 4510220. ir far east: k&h bldg., 2f, 30-4 nishi-ikebukuro 3-chome, toshima-ku, tokyo, japan 171. tel: 81 3 3983 0086. ir southeast asia: 1 kim seng promenade, great world city west tower,13-11, singapore 237994. tel: ++ 65 838 4630. ir taiwan: 16 fl. suite d.207, sec. 2, tun haw south road, taipei, 10673, taiwan. tel: 886 2 2377 9936. http://www.irf.com fax-on-demand: +44 1883 733420 data and specifications subject to change w ithout notice.
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